AMD Patents
Posted By
Van Smith
Date: October 14, 2001
Michael Westman has been conducting research into AMD’s patent portfolio. In the last few years AMD has been one of the most successful patent producing companies in the world. Despite the great size disparity, the number two CPU company is outperforming its much, much larger rival, Intel.
Introducing his research, Michael stated, “I took a look at the patents presented at www.chip-architect.com and found some more patents. I marked the most interesting with bold text, but there is a lot of nice stuff here.”
Pat.no |
Title |
6,301,159 |
50% EXE tracking circuit |
6,300,661 |
Mutual implant region used for applying power/ground to a source of a transistor and a well of a substrate |
6,300,658 |
Method for reduced gate aspect ration to improve gap-fill after spacer etch |
6,300,207 |
Depleted sidewall-poly LDD transistor |
6,300,205 |
Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regions |
6,300,203 |
Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors |
6,300,182 |
Field effect transistor having dual gates with asymmetrical doping for reduced threshold voltage |
6,300,180 |
Method for forming an integrated circuit having improved polysilicon resistor structures |
6,300,148 |
Semiconductor structure with a backside protective layer and backside probes and a method for constructing the structure |
6,300,145 |
Ion implantation and laser anneal to create n-doped structures in silicon |
6,299,688 |
Developer nozzle clean combs |
6,298,438 |
System and method for conditional moving an operand from a source register to destination register |
6,298,424 |
Computer system including priorities for memory operations and allowing a higher priority memory operation to interrupt a lower priority memory operation |
6,298,423 |
High performance load/store functional unit and data cache |
6,298,396 |
System for loading a current buffer desciptor register with a value different from current value to cause a previously read buffer descriptor to be read again |
6,298,367 |
Floating point addition pipeline including extreme value, comparison and accumulate functions |
6,297,993 |
Acceleration voltage implementation for a high density flash memory device |
6,297,988 |
Mode indicator for multi-level memory |
6,297,644 |
Multipurpose defect test structure with switchable voltage contrast capability and method of use |
6,297,535 |
Transistor having a gate dielectric which is substantially resistant to drain-side hot carrier injection |
6,297,167 |
In-situ etch of multiple layers during formation of local interconnects |
6,297,159 |
Method and apparatus for chemical polishing using field responsive materials |
6,297,157 |
Time ramped method for plating of high aspect ratio semiconductor vias and channels |
6,297,148 |
Method of forming a silicon bottom anti-reflective coating with reduced junction leakage during salicidation |
6,297,146 |
Low resistivity semiconductor barrier layer manufacturing method |
6,297,143 |
Process for forming a bit-line in a MONOS device |
6,297,117 |
Formation of confined halo regions in field effect transistor |
6,297,115 |
Cmos processs with low thermal budget |
6,297,111 |
Self-aligned channel transistor and method for making same |
6,297,107 |
High dielectric constant materials as gate dielectrics |
6,297,083 |
Method of forming four transistor SRAM cell having a resistor |
6,297,065 |
Method to rework device with faulty metal stack layer |
6,296,710 |
Multi-port gas injector for a vertical furnace used in semiconductor processing |
6,296,709 |
Temperature ramp for vertical diffusion furnace |
6,295,594 |
Dynamic memory allocation suitable for stride-based prefetching |
6,295,586 |
Queue based memory controller |
6,295,574 |
Real time interrupt handling for superscalar processors |
6,295,573 |
Point-to-point interrupt messaging within a multiprocessing computer system |
6,295,572 |
Integrated SCSI and ethernet controller on a PCI local bus |
6,295,314 |
Method and apparatus for partitioning a modem between non-real-time and real-time processing environments |
6,295,228 |
System for programming memory cells |
6,295,016 |
Pipeline analog to digital (A/D) converter with relaxed accuracy requirement for sample and hold stage |
6,295,011 |
Method of coding a number for storing in a memory |
6,294,923 |
Method and system for detecting faults utilizing an AC power supply |
6,294,829 |
Multilayer quadruple gate field effect transistor structure for use in integrated circuit devices |
6,294,472 |
Dual slurry particle sizes for reducing microscratching of wafers |
6,294,460 |
Semiconductor manufacturing method using a high extinction coefficient dielectric photomask |
6,294,433 |
Gate re-masking for deeper source/drain co-implantation processes |
6,294,430 |
Nitridization of the pre-ddi screen oxide |
6,294,412 |
Silicon based lateral tunneling memory cell |
6,294,397 |
Drop-in test structure and abbreviated integrated circuit process flow for characterizing production integrated circuit process flow, topography, and equipment |
6,294,396 |
Monitoring barrier metal deposition for metal interconnect |
6,294,395 |
Back side reactive ion etch |
6,293,698 |
Method for precise temperature sensing and control of semiconductor structures |
6,292,884 |
Reorder buffer employing last in line indication |
6,292,483 |
Apparatus and method for generating an index key for a network switch routing table using a programmable hash function |
6,292,467 |
Apparatus and method of determining a link status between network stations connected to a telephone line medium |
6,292,425 |
Power saving on the fly during reading of data from a memory device |
6,292,406 |
Method and low-power circuits used to generate accurate boosted wordline voltage for flash memory core cells in read mode |
6,292,399 |
Method and low-power circuits used to generate accurate drain voltage for flash memory core cells in read mode |
6,292,049 |
Circuit and method for reducing voltage oscillations on a digital integrated circuit |
6,291,887 |
Dual damascene arrangements for metal interconnection with low k dielectric constant materials and nitride middle etch stop layer |
6,291,864 |
Gate structure having polysilicon layer with recessed side portions |
6,291,860 |
Self-aligned contacts to source/drain silicon electrodes utilizing polysilicon and silicides |
6,291,832 |
Resonant tunneling diode latch |
6,291,348 |
Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed |
6,291,339 |
Bilayer interlayer dielectric having a substantially uniform composite interlayer dielectric constant over pattern features of varying density and method of making the same |
6,291,332 |
Electroless plated semiconductor vias and channels |
6,291,329 |
Protective oxide buffer layer for ARC removal |
6,291,302 |
Selective laser anneal process using highly reflective aluminum mask |
6,291,296 |
Method for removing anti-reflective coating layer using plasma etch process before contact CMP |
6,291,278 |
Method of forming transistors with self aligned damascene gate contact |
6,291,253 |
Feedback control of deposition thickness based on polish planarization |
6,291,252 |
Automatic method to eliminate first-wafer effect |
6,291,137 |
Sidewall formation for sidewall patterning of sub 100 nm structures |
6,291,135 |
Ionization technique to reduce defects on next generation lithography mask during exposure |
6,291,113 |
Sidelobe suppressing phase shift mask and method |
6,291,082 |
Method of electroless ag layer formation for cu interconnects |
6,289,468 |
Technique for controlling system bus timing with on-chip programmable delay lines |
6,289,442 |
Circuit and method for tagging and invalidating speculatively executed instructions |
6,288,951 |
Method and apparatus for continuously regulating a charge pump output voltage using a capacitor divider |
6,288,448 |
Semiconductor interconnect barrier of boron silicon nitride and manufacturing method therefor |
6,288,432 |
Semiconductor fabrication employing a post-implant anneal within a low temperature, high pressure nitrogen ambient to improve channel and gate oxide reliability |
6,288,411 |
Defect collecting structures for photolithography |
6,287,968 |
Method of defining copper seed layer for selective electroless plating processing |
6,287,959 |
Deep submicron metallization using deep UV photoresist |
6,287,953 |
Minimizing transistor size in integrated circuits |
6,287,925 |
Formation of highly conductive junctions by rapid thermal anneal and laser thermal process |
6,287,922 |
Method for fabricating graded LDD transistor using controlled polysilicon gate profile |
6,287,918 |
Process for fabricating a metal semiconductor device component by lateral oxidization |
6,287,917 |
Process for fabricating an MNOS flash memory device |
6,287,904 |
Two step mask process to eliminate gate end cap shortening |
6,287,877 |
Electrically quantifying transistor spacer width |
6,286,081 |
Mechanism for ensuring data coherency during sequential readings of portions of data that changes with time |
6,285,627 |
Address transition detector architecture for a high density flash memory device |
6,285,601 |
Method and apparatus for multi-level buffer thresholds for higher efficiency data transfers |
6,285,599 |
Decoded source lines to tighten erase Vt distribution |
6,285,594 |
Wordline voltage protection |
6,285,588 |
Erase scheme to tighten the threshold voltage distribution of EEPROM flash memory cells |
6,285,583 |
High speed sensing to detect write protect state in a flash memory device |
6,285,181 |
Method and system for determining the location of an open circuit in a semiconductor device using power modulation |
6,285,133 |
Ion implanter with multi-level vacuum |
6,285,054 |
Trenched gate non-volatile semiconductor device with the source/drain regions spaced from the trench by sidewall dopings |
6,285,052 |
Integrated capacitor |
6,285,036 |
Endpoint detection for thinning of silicon of a flip chip bonded integrated circuit |
6,284,672 |
Method of forming a super-shallow amorphous layer in silicon |
6,284,636 |
Tungsten gate method and apparatus |
6,284,630 |
Method for fabrication of abrupt drain and source extensions for a field effect transistor |
6,284,622 |
Method for filling trenches |
6,284,608 |
Method for making accumulation mode N-channel SOI |
6,284,602 |
Process to reduce post cycling program VT dispersion for NAND flash memory devices |
6,284,600 |
Species implantation for minimizing interface defect density in flash memory devices |
6,284,582 |
MOS-gate tunneling-injection bipolar transistor |
6,284,553 |
Location dependent automatic defect classification |
6,283,113 |
Strip separation tool |
6,282,639 |
Configurable branch prediction for a processor performing speculative execution |
6,281,666 |
Efficiency of a multiphase switching power supply during low power mode |
6,281,587 |
Multi-layered coaxial interconnect structure |
6,281,584 |
Integrated circuit with improved adhesion between interfaces of conductive and dielectric surfaces |
6,281,559 |
Gate stack structure for variable threshold voltage |
6,281,555 |
Integrated circuit having isolation structures |
6,281,132 |
Device and method for etching nitride spacers formed upon an integrated circuit gate conductor |
6,281,130 |
Method for developing ultra-thin resist films |
6,281,121 |
Damascene metal interconnects using highly directional deposition of barrier and/or seed layers including (III) filling metal |
6,281,086 |
Semiconductor device having a low resistance gate conductor and method of fabrication the same |
6,281,078 |
Manufacturing process to eliminate ONO fence material in high density NAND-type flash memory devices |
6,281,029 |
Probe points for heat dissipation during testing of flip chip IC |
6,281,028 |
LED alignment points for semiconductor die |
6,281,025 |
Substrate removal as a function of SIMS analysis |
6,279,147 |
Use of an existing product map as a background for making test masks |
6,279,107 |
Branch selectors associated with byte ranges within an instruction cache for rapidly identifying branch predictions |
6,279,106 |
Method for reducing branch target storage by calculating direct branch targets on the fly |
6,279,101 |
Instruction decoder/dispatch |
6,279,058 |
Master isochronous clock structure having a clock controller coupling to a CPU and two data buses |
6,279,044 |
Network interface for changing byte alignment transferring on a host bus according to master and slave mode memory and I/O mapping requests |
6,278,308 |
Low-power flip-flop circuit employing an asymmetric differential stage |
6,278,181 |
Stacked multi-chip modules using C4 interconnect technology having improved thermal management |
6,278,166 |
Use of nitric oxide surface anneal to provide reaction barrier for deposition of tantalum pentoxide |
6,277,744 |
Two-level silane nucleation for blanket tungsten deposition |
6,277,698 |
Method of manufacturing semiconductor devices having uniform, fully doped gate electrodes |
6,277,690 |
Elimination of N+ implant from flash technologies by replacement with standard medium-doped-drain (Mdd) implant |
6,277,661 |
Method for detecting sloped contact holes using a critical-dimension waveform |
6,277,659 |
Substrate removal using thermal analysis |
6,277,544 |
Reverse lithographic process for semiconductor spaces |
6,276,989 |
Method and apparatus for controlling within-wafer uniformity in chemical mechanical polishing |
6,276,038 |
Apparatus for gripping a plug of an IC package container during removal of the plug |
6,275,975 |
Scalable mesh architecture with reconfigurable paths for an on-chip data transfer network incorporating a network configuration manager |
6,275,972 |
Method for accurate channel-length extraction in MOSFETs |
6,275,927 |
Compressing variable-length instruction prefix bytes |
6,275,905 |
Messaging scheme to maintain cache coherency and conserve system memory bandwidth during a memory read operation in a multiprocessing computer system |
6,275,894 |
Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture |
6,275,782 |
Non-intrusive performance monitoring |
6,275,424 |
Reduction of voltage stress across a gate oxide and across a junction within a high voltage transistor of an erasable memory device |
6,275,421 |
Chip enable input buffer |
6,275,415 |
Multiple byte channel hot electron programming using ramped gate and source bias voltage |
6,275,414 |
Uniform bitline strapping of a non-volatile memory cell |
6,275,412 |
Common flash interface implementation for a simultaneous operation flash memory device |
6,274,915 |
Method of improving MOS device performance by controlling degree of depletion in the gate electrode |
6,274,894 |
Low-bandgap source and drain formation for short-channel MOS transistors |
6,274,511 |
Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layer |
6,274,504 |
Minimizing metal corrosion during post metal solvent clean |
6,274,501 |
Formation of structure to accurately measure source/drain resistance |
6,274,475 |
Specialized metal profile for via landing areas |
6,274,473 |
Flip chip packages |
6,274,472 |
Tungsten interconnect method |
6,274,469 |
Process using a plug as a mask for a gate |
6,274,443 |
Simplified graded LDD transistor using controlled polysilicon gate profile |
6,274,442 |
Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making same |
6,274,433 |
Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices |
6,274,420 |
Sti (shallow trench isolation) structures for minimizing leakage current through drain and source silicides |
6,274,419 |
Trench isolation of field effect transistors |
6,274,415 |
Self-aligned Vt implant |
6,274,396 |
Method of manufacturing calibration wafers for determining in-line defect scan tool sensitivity |
6,274,289 |
Chemical resist thickness reduction process |
6,273,961 |
Method for cleaning semiconductor processing equipment by reducing particles |
6,273,409 |
Locking screw mechanism that requires minimized loosening force |
6,272,393 |
Efficient tool utilization using previous scan data |
6,272,392 |
Methodology for extracting effective lens aberrations using a neural network |
6,272,169 |
Software based modems that interact with the computing enviroment |
6,272,046 |
Individual source line to decrease column leakage |
6,272,043 |
Apparatus and method of direct current sensing from source side in a virtual ground array |
6,271,602 |
Method for reducing the susceptibility to chemical-mechanical polishing damage of an alignment mark formed in a semiconductor substrate |
6,271,591 |
Copper-aluminum metallization |
6,271,563 |
MOS transistor with high-K spacer designed for ultra-large-scale integration |
6,271,154 |
Methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profile |
6,271,151 |
Method and apparatus for controlling the thickness of a gate oxide in a semiconductor manufacturing process |
6,271,132 |
Self-aligned source and drain extensions fabricated in a damascene contact and gate process |
6,271,122 |
Method of compensating for material loss in a metal silicone layer in contacts of integrated circuit devices |
6,271,120 |
Method of enhanced silicide layer for advanced metal diffusion barrier layer application |
6,271,114 |
System for adjusting the size of conductive lines based upon the contact size |
6,271,112 |
Interlayer between titanium nitride and high density plasma oxide |
6,271,095 |
Locally confined deep pocket process for ULSI mosfets |
6,271,087 |
Method for forming self-aligned contacts and local interconnects using self-aligned local interconnects |
6,270,929 |
Damascene T-gate using a relacs flow |
6,270,635 |
Consistent plating system for electroplating |
6,270,580 |
Modified material deposition sequence for reduced detect densities in semiconductor manufacturing |
6,270,579 |
Nozzle arm movement for resist development |
6,269,459 |
Error reporting mechanism for an AGP chipset driver using a registry |
6,269,454 |
Maintaining object information concurrent with data optimization for debugging |
6,269,436 |
Superscalar microprocessor configured to predict return addresses from a return stack storage |
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